Tóm tắt: In this study, all diodes based on GaN and InGaN materials will be made at the low temperature with the cost-effective and reactive radio-frequency (RF) sputtering technique. The GaN and its alloy films were characterized by FE-SEM, EDS, XRD, TEM, AFM and Hall measurement at the room temperature. The electrical characterizations of diodes were determined by I–V and C–V measurements. The characteristics of our diodes can be successfully explained with the thermionic-emission (TE) model. Cheungs' and ...
Trung tâm Học liệu – Phát triển Dạy và Học
Số 126 - Nguyễn Thiện Thành, Khóm 4, phường 5, TP. Trà Vinh - Tỉnh Trà Vinh. ĐT: (074)3855246 - 232 - Email: lrc@tvu.edu.vn
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