Electrical characterizations of diodes fabricated on GaN and InGaN films by RF magnetron sputtering

Loại CSDL: Tài liệu số, Luận án tiến sĩ

Thông tin xb: Taiwan: National Taiwan University of Science and Technology, 2015

Ký hiệu xếp giá: 621.38152 / T501

Mô tả vật lý: xx, 166 p.: ill., 30 cm

Tác giả bổ sung: Kuo, Dong - Hau

Tóm tắt: In this study, all diodes based on GaN and InGaN materials will be made at the low temperature with the cost-effective and reactive radio-frequency (RF) sputtering technique. The GaN and its alloy films were characterized by FE-SEM, EDS, XRD, TEM, AFM and Hall measurement at the room temperature. The electrical characterizations of diodes were determined by I–V and C–V measurements. The characteristics of our diodes can be successfully explained with the thermionic-emission (TE) model. Cheungs' and ...

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